FPN430 Specs and Replacement
Type Designator: FPN430
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO-226
FPN430 Substitution
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FPN430 datasheet
FPN430 FPN430A TO-226 C B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 35 V VEBO Emitter-Base ... See More ⇒
Detailed specifications: FMBM5551, FMBS5401, FMBS549, FMBS5551, FMBSA06, FMBSA56, FPN330, FPN330A, 2SA1015, FPN430A, FPN530, FPN530A, FPN560, FPN560A, FPN630, FPN630A, FPN660
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