FPN430 Datasheet, Equivalent, Cross Reference Search
Type Designator: FPN430
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-226
FPN430 Transistor Equivalent Substitute - Cross-Reference Search
FPN430 Datasheet (PDF)
..1. Size:48K fairchild semi
fpn430.pdf
fpn430.pdf
FPN430FPN430ATO-226CBEPNP Low Saturation TransistorThese devices are designed for high current gain and lowsaturation voltage with collector currents up to 2.0 A continuous.Sourced from Process PB.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 35 VVEBO Emitter-Base
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
