All Transistors. FPN660 Datasheet

 

FPN660 Datasheet and Replacement


   Type Designator: FPN660
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Collector Capacitance (Cc): 45 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO-226
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FPN660 Datasheet (PDF)

 ..1. Size:57K  fairchild semi
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FPN660

FPN660/FPN660APNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. Sourced from process PA.CTO-226BEAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter FPN660 FPN660A UnitsVCEO Collector-Emitter Voltage 60 60 VVCBO Collector-Base Voltage 80 60 VV

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | MQ3639 | 2SC3296 | KRA741U

Keywords - FPN660 transistor datasheet

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