FPN660 Specs and Replacement

Type Designator: FPN660

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-226

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FPN660 datasheet

 ..1. Size:57K  fairchild semi

 fpn660.pdf pdf_icon

FPN660

FPN660/FPN660A PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. Sourced from process PA. C TO-226 BE Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter FPN660 FPN660A Units VCEO Collector-Emitter Voltage 60 60 V VCBO Collector-Base Voltage 80 60 V V... See More ⇒

Detailed specifications: FPN430, FPN430A, FPN530, FPN530A, FPN560, FPN560A, FPN630, FPN630A, MPSA42, FPN660A, FPNH10, FSB560, FSB560A, FSB619, FSB649, FSB660, FSB660A

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