All Transistors. FPNH10 Datasheet

 

FPNH10 Datasheet and Replacement


   Type Designator: FPNH10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 650 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO-92
 

 FPNH10 Substitution

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FPNH10 Datasheet (PDF)

 ..1. Size:71K  fairchild semi
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FPNH10

FPNH10C TO-92BENPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifiers,with collector currents in the 100 A to 20 mA range in commonemitter or common base mode of operations, and in low frequencydrift, high output UHF oscillators. Sourced from Process 42.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO C

Datasheet: FPN530 , FPN530A , FPN560 , FPN560A , FPN630 , FPN630A , FPN660 , FPN660A , TIP32C , FSB560 , FSB560A , FSB619 , FSB649 , FSB660 , FSB660A , FSB6726 , FSB749 .

History: KT6107A | 2SB341 | BU2515AX | D8 | BF111 | CSC1674R

Keywords - FPNH10 transistor datasheet

 FPNH10 cross reference
 FPNH10 equivalent finder
 FPNH10 lookup
 FPNH10 substitution
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