All Transistors. FPNH10 Datasheet

 

FPNH10 Datasheet, Equivalent, Cross Reference Search


   Type Designator: FPNH10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 650 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO-92

 FPNH10 Transistor Equivalent Substitute - Cross-Reference Search

   

FPNH10 Datasheet (PDF)

 ..1. Size:71K  fairchild semi
 fpnh10.pdf

FPNH10 FPNH10

FPNH10C TO-92BENPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifiers,with collector currents in the 100 A to 20 mA range in commonemitter or common base mode of operations, and in low frequencydrift, high output UHF oscillators. Sourced from Process 42.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO C

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: 2SB1120F

 

 
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