FPNH10 Specs and Replacement

Type Designator: FPNH10

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 650 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO-92

 FPNH10 Substitution

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FPNH10 datasheet

 ..1. Size:71K  fairchild semi

 fpnh10.pdf pdf_icon

FPNH10

FPNH10 C TO-92 B E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO C... See More ⇒

Detailed specifications: FPN530, FPN530A, FPN560, FPN560A, FPN630, FPN630A, FPN660, FPN660A, 431, FSB560, FSB560A, FSB619, FSB649, FSB660, FSB660A, FSB6726, FSB749

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