All Transistors. FSB649 Datasheet

 

FSB649 Datasheet and Replacement


   Type Designator: FSB649
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SSOT-3 SOT-23
 

 FSB649 Substitution

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FSB649 Datasheet (PDF)

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FSB649

FSB649CEB SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter FSB649 Units25 VVCEO Collector-Emitter Voltage35 VVCBO Collector-Base Voltage5 VVEBO Emit

Datasheet: FPN630 , FPN630A , FPN660 , FPN660A , FPNH10 , FSB560 , FSB560A , FSB619 , TIP36C , FSB660 , FSB660A , FSB6726 , FSB749 , FSBCW30 , FTM3725 , FZT3019 , KSA1015 .

History: KT9104B | 2N6245 | BP469 | 2SC1247 | MMPQ2222 | BDX95 | BP30-12L

Keywords - FSB649 transistor datasheet

 FSB649 cross reference
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