FSB649 Specs and Replacement

Type Designator: FSB649

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SSOT-3 SOT-23

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FSB649 datasheet

 ..1. Size:30K  fairchild semi

 fsb649.pdf pdf_icon

FSB649

FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter FSB649 Units 25 V VCEO Collector-Emitter Voltage 35 V VCBO Collector-Base Voltage 5 V VEBO Emit... See More ⇒

Detailed specifications: FPN630, FPN630A, FPN660, FPN660A, FPNH10, FSB560, FSB560A, FSB619, D882P, FSB660, FSB660A, FSB6726, FSB749, FSBCW30, FTM3725, FZT3019, KSA1015

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