2N6329 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N6329 Specs and Replacement

Type Designator: 2N6329

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 40 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 6

Noise Figure, dB: -

Package: TO3

2N6329 Substitution

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2N6329 datasheet

..1. Size:21K microsemi

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..2. Size:219K inchange semiconductor

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isc Silicon PNP Power Transistor 2N6329 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-60V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -6... See More ⇒

9.1. Size:150K jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(... See More ⇒

9.2. Size:22K microsemi

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