KST5401 Datasheet and Replacement
Type Designator: KST5401
SMD Transistor Code: 2L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT-23
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KST5401 Datasheet (PDF)
kst5401.pdf

KST5401High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 VVCEO Collector-Emitter Voltage -150 VVEBO Emitter-Base Voltage -5 VIC Collector Current -500 mAPC Collector Power Dissipation 350 mWTSTG Storage T
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: NTE2547 | BFY12B | BD746F | BLU60-12 | MQ5401R | RN1909 | SBC846BLT1G
Keywords - KST5401 transistor datasheet
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History: NTE2547 | BFY12B | BD746F | BLU60-12 | MQ5401R | RN1909 | SBC846BLT1G



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