KST5401 Datasheet, Equivalent, Cross Reference Search
Type Designator: KST5401
SMD Transistor Code: 2L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT-23
KST5401 Transistor Equivalent Substitute - Cross-Reference Search
KST5401 Datasheet (PDF)
..1. Size:56K fairchild semi
kst5401.pdf
kst5401.pdf
KST5401High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 VVCEO Collector-Emitter Voltage -150 VVEBO Emitter-Base Voltage -5 VIC Collector Current -500 mAPC Collector Power Dissipation 350 mWTSTG Storage T
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
