NZT605 Specs and Replacement

Type Designator: NZT605

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 110 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: SOT-223

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NZT605 datasheet

 ..1. Size:81K  fairchild semi

 nzt605.pdf pdf_icon

NZT605

January 2007 NZT605 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from process 06. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * TC = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 110 V... See More ⇒

Detailed specifications: MMBTH34, MP4501, MP4504, MPSW3725, NTE291, NTE292, NZT560, NZT560A, 2SC1815, NZT651, NZT660, NZT660A, NZT6714, TN6714A, NZT6715, TN6715A, NZT6717

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