NZT605 Datasheet, Equivalent, Cross Reference Search
Type Designator: NZT605
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: SOT-223
NZT605 Transistor Equivalent Substitute - Cross-Reference Search
NZT605 Datasheet (PDF)
..1. Size:81K fairchild semi
nzt605.pdf
nzt605.pdf
January 2007NZT605NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from process 06.4321 SOT-2231. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * TC = 25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 110 V
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2SA1015 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
