All Transistors. NZT605 Datasheet

 

NZT605 Datasheet and Replacement


   Type Designator: NZT605
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 110 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: SOT-223
 

 NZT605 Substitution

   - BJT ⓘ Cross-Reference Search

   

NZT605 Datasheet (PDF)

 ..1. Size:81K  fairchild semi
 nzt605.pdf pdf_icon

NZT605

January 2007NZT605NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from process 06.4321 SOT-2231. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * TC = 25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 110 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA1832O | C106 | 2SD2625Z9

Keywords - NZT605 transistor datasheet

 NZT605 cross reference
 NZT605 equivalent finder
 NZT605 lookup
 NZT605 substitution
 NZT605 replacement

 

 
Back to Top

 


 
.