All Transistors. NZT605 Datasheet

 

NZT605 Datasheet, Equivalent, Cross Reference Search


   Type Designator: NZT605
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 110 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: SOT-223

 NZT605 Transistor Equivalent Substitute - Cross-Reference Search

   

NZT605 Datasheet (PDF)

 ..1. Size:81K  fairchild semi
nzt605.pdf

NZT605 NZT605

January 2007NZT605NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from process 06.4321 SOT-2231. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * TC = 25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 110 V

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top