All Transistors. TN5320A Datasheet

 

TN5320A Datasheet and Replacement


   Type Designator: TN5320A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 75 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO-226
 

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TN5320A Datasheet (PDF)

 ..1. Size:88K  fairchild semi
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TN5320A

September 2007TN5320APNP High Voltage Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 34. 1TO-2261. Collector 2. Base 3. EmitterAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 75 VVCEO Collector-Emitte

 9.1. Size:527K  supertex
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TN5320A

TN5325N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (2.0V max.) This low threshold, enhancement-mode (normally-off) High input impedance and high gaintransistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon-gate manufacturing process. This Free from secondary breakdowncombination produces a device

Datasheet: SD1398 , SJ5436 , SJ5437 , SJ5439 , STS8550 , TN3019A , TN3440A , TN4033A , 2222A , TN5415A , TN6705A , TN6707A , TN6716A , TN6718A , TN6719A , TN6725A , TN6727A .

History: 2SA1478F | 2N2496

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