TN6707A Datasheet, Equivalent, Cross Reference Search
Type Designator: TN6707A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-226
TN6707A Transistor Equivalent Substitute - Cross-Reference Search
TN6707A Datasheet (PDF)
tn6707a.pdf
TN6707ANPN General Purpose Amplifier These devices is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A Sourced from process 39.CTO-226BEAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter FPN660 UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 100 VVEBO Emitter-Base Volta
tn6705a.pdf
Discrete POWER & SignalTechnologiesTN6705ATO-226CBENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 1.2 A. Sourced fromProcess 38. See TN6715A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
