TN6707A Specs and Replacement
Type Designator: TN6707A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO-226
TN6707A Substitution
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TN6707A datasheet
TN6707A NPN General Purpose Amplifier These devices is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A Sourced from process 39. C TO-226 BE Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter FPN660 Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Volta... See More ⇒
Discrete POWER & Signal Technologies TN6705A TO-226 C B E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See TN6715A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V... See More ⇒
Detailed specifications: SJ5439, STS8550, TN3019A, TN3440A, TN4033A, TN5320A, TN5415A, TN6705A, BC556, TN6716A, TN6718A, TN6719A, TN6725A, TN6727A, ZTX749A, UNR1110, UNR1111
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