UNR111H Specs and Replacement
Type Designator: UNR111H
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: M-A1
UNR111H Substitution
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UNR111H datasheet
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Detailed specifications: UNR1115, UNR1116, UNR1117, UNR1118, UNR1119, UNR111D, UNR111E, UNR111F, BDT88, UNR111L, UNR1210, UNR1211, UNR1212, UNR1213, UNR1214, UNR1215, UNR1216
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