STC503D Datasheet, Equivalent, Cross Reference Search
Type Designator: STC503D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TO-252
STC503D Transistor Equivalent Substitute - Cross-Reference Search
STC503D Datasheet (PDF)
stc503d.pdf
STC503DNPN Silicon TransistorApplications PIN Connection Power amplifier application High current switching application Features Power Transistor General Purpose application Low saturation voltage : VCE(sat)=0.4V Typ. High Voltage : VCEO=65V Min. TO-252 Ordering Information Type NO. Marking Package Code STC503D STC503 TO-252Absolute Maximum
stc503f.pdf
STC503FNPN Silicon TransistorPIN Connection Applications Power amplifier application High current switching application Features Power Transistor General Purpose application Low saturation voltage : VCE(sat)=0.4V Typ. SOT-89 High Voltage : VCEO=65V Min. Ordering Information Type NO. Marking Package Code C503 STC503F SOT-89 YWW Absolute Ma
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
