2N636A Datasheet. Specs and Replacement

Type Designator: 2N636A  📄📄 

Material of Transistor: Ge

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 25 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO5

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2N636A datasheet

 9.1. Size:449K  1

 2n6368.pdf pdf_icon

2N636A

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 9.2. Size:148K  jmnic

 2n6360.pdf pdf_icon

2N636A

JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emit... See More ⇒

 9.3. Size:116K  inchange semiconductor

 2n6360.pdf pdf_icon

2N636A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION... See More ⇒

Detailed specifications: 2N6363, 2N6364, 2N6365, 2N6365A, 2N6366, 2N6367, 2N6368, 2N6369, 8050, 2N637, 2N6370, 2N6371, 2N6372, 2N6373, 2N6374, 2N6375, 2N6376

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