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2N636A Specs and Replacement


   Type Designator: 2N636A
   Material of Transistor: Ge
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 25 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO5

 2N636A Transistor Equivalent Substitute - Cross-Reference Search

   

2N636A detailed specifications

 9.1. Size:449K  1
 2n6368.pdf pdf_icon

2N636A

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 9.2. Size:148K  jmnic
 2n6360.pdf pdf_icon

2N636A

JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emit... See More ⇒

 9.3. Size:116K  inchange semiconductor
 2n6360.pdf pdf_icon

2N636A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION... See More ⇒

Detailed specifications: 2N6363 , 2N6364 , 2N6365 , 2N6365A , 2N6366 , 2N6367 , 2N6368 , 2N6369 , 8050 , 2N637 , 2N6370 , 2N6371 , 2N6372 , 2N6373 , 2N6374 , 2N6375 , 2N6376 .

Keywords - 2N636A transistor specs

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