SBC327 Specs and Replacement
Type Designator: SBC327
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 16 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO-92
SBC327 Substitution
- BJT ⓘ Cross-Reference Search
SBC327 datasheet
SBC327 Semiconductor Semiconductor PNP Silicon Transistor Descriptions High current application Switching application Features Suitable for AF-Driver stage and low power output stages Complementary Pair with SBC337 Ordering Information Type NO. Marking Package Code0 SBC327 SBC327 TO-92 Outline Dimensions unit mm 3.45 0.1 4.5 0.1 2.25 0.1 0.4 0.02 2.06... See More ⇒
SBC328 Semiconductor Semiconductor PNP Silicon Transistor Descriptions High current application Switching application Features Suitable for AF-Driver stage and low power output stages Complementary pair with SBC338 Ordering Information Type NO. Marking Package Code SBC328 SBC328 TO-92 Outline Dimensions unit mm 3.45 0.1 4.5 0.1 2.25 0.1 ... See More ⇒
Detailed specifications: DP100S, DP500, DP500F, DP500P, MMBT3904EF, MMBT3906EF, NT331, NT332, TIP41, SBC328, SBC337, SBC338, SBC546, SBC547, SBC548, SBC556, SBC557
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