All Transistors. SBT5551 Datasheet

 

SBT5551 Datasheet and Replacement


   Type Designator: SBT5551
   SMD Transistor Code: FNF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-23
 

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SBT5551 Datasheet (PDF)

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SBT5551

SBT5551NPN Silicon TransistorPIN ConnectionDescriptions General purpose amplifier High voltage application Features high collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) Complementary pair with SBT5401 SOT-23 Ordering Information Type NO. Marking Package Code FNF SBT5551 SOT-2

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SBT5551

SBT5551FNPN Silicon TransistorDescriptions PIN Connection General purpose amplifier High voltage application 3 Features high collector breakdown voltage : 1 VCBO = 180V, VCEO = 160V Low collector saturation voltage : 2VCE(sat)=0.5V(MAX.) SOT-23F Complementary pair with SBT5401F Ordering Information Type NO. Marking Package Code FNF

Datasheet: SBT3904F , SBT3904U , SBT3904UF , SBT3906 , SBT3906F , SBT3906UF , SBT5401 , SBT5401F , S8550 , SBT5551F , SPS8050 , SPS8550 , STA124 , STA124M , STA124S , STA124SF , STA733 .

History: RT2P02M | H238 | 2N2434

Keywords - SBT5551 transistor datasheet

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