STC5551F Datasheet. Specs and Replacement
Type Designator: STC5551F
SMD Transistor Code: N51
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT-89
STC5551F Substitution
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STC5551F datasheet
STC5551F NPN Silicon Transistor PIN Connection Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage VCBO = 180V, VCEO = 160V Low collector saturation voltage SOT-89 VCE(sat)=0.5V(MAX.) Ordering Information Type No. Marking Package Code N51 STC5551F SOT-89 YWW N51 DEVICE CODE, hF... See More ⇒
Detailed specifications: STB1277L, STC128, STC128M, STC201F, STC221F, STC401, STC4081, STC411, S9013, STC945, STD123, STD123AS, STD123ASF, STD123SF, STD123U, STD123UF, STD129
Keywords - STC5551F pdf specs
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History: BC807-25LT3G
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