All Transistors. STC5551F Datasheet

 

STC5551F Datasheet, Equivalent, Cross Reference Search


   Type Designator: STC5551F
   SMD Transistor Code: N51
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-89

 STC5551F Transistor Equivalent Substitute - Cross-Reference Search

   

STC5551F Datasheet (PDF)

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stc5551f.pdf

STC5551F
STC5551F

STC5551FNPN Silicon TransistorPIN Connection Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage SOT-89 : VCE(sat)=0.5V(MAX.) Ordering Information Type No. Marking Package Code N51 STC5551F SOT-89 YWW N51: DEVICE CODE, : hF

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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