All Transistors. STD1766 Datasheet

 

STD1766 Datasheet, Equivalent, Cross Reference Search


   Type Designator: STD1766
   SMD Transistor Code: B2
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-89

 STD1766 Transistor Equivalent Substitute - Cross-Reference Search

   

STD1766 Datasheet (PDF)

 ..1. Size:466K  auk
std1766.pdf

STD1766
STD1766

STD1766 NPN Silicon Transistor Descriptions Medium power amplifier Collector2,4Features Base P (Collector power dissipation)=2W C 1(Ceramic substrate of 250 0.8t used) Low collector saturation voltage Emitter3: V =0.5V (Typ.) CE(sat) Complementary pair with STB1188 SOT-89 Green device and RoHS compliant device Availab

 9.1. Size:180K  1
std17n05 std17n05-1 std17n05t4 std17n06 std17n06-1 std17n06t4.pdf

STD1766
STD1766

STD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V

 9.2. Size:350K  1
std17n05l-1 std17n06l-1 std17n05lt4 std17n06lt4.pdf

STD1766
STD1766

STD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD17N05L 50 V

 9.3. Size:350K  st
std17n05l std17n06l.pdf

STD1766
STD1766

STD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD17N05L 50 V

 9.4. Size:521K  st
sti17nf25 sti17nf25 std17nf25 stf17nf25 stp17nf25.pdf

STD1766
STD1766

STI17NF25 - STD17NF25STF17NF25 - STP17NF25N-channel 250V - 0.14 - 17A - TO-220/FP - DPAK - I2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTD17NF25 250V

 9.5. Size:172K  st
std17n.pdf

STD1766
STD1766

STD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05L 50 V

 9.6. Size:180K  st
std17n05.pdf

STD1766
STD1766

STD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V

 9.7. Size:264K  st
std17nf03l.pdf

STD1766
STD1766

STD17NF03LN-CHANNEL 30V - 0.038 - 17A - DPAK/IPAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD17NF03L 30V

 9.8. Size:557K  st
std17nf25 stf17nf25 stp17nf25.pdf

STD1766
STD1766

STD17NF25, STF17NF25, STP17NF25DatasheetN-channel 250 V, 0.140 typ., 17 A STripFET II Power MOSFETs in DPAK, TO-220FP and TO-220 packagesFeaturesTAB321DPAKVDS RDS(on)max. ID PTOTOrder codeTABSTD17NF25 90 WSTF17NF25 250 V 0.165 17 A 25 W32 3121TO-220FP TO-220 STP17NF25 90 WD(2, TAB) Exceptional dv/dt capability 100% avalanche tested

 9.9. Size:308K  st
std17nf03l-1 std17nf03lt4.pdf

STD1766
STD1766

STD17NF03LSTD17NF03L-1N-channel 30V - 0.038 - 17A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD17NF03L-1 30V

 9.10. Size:55K  st
std17ne03l.pdf

STD1766
STD1766

STD17NE03LN - CHANNEL 30V - 0.034 - 17A - DPAKSTripFET " POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD17NE03L 30 V

 9.11. Size:310K  st
std17nf03l std17nf03l-1.pdf

STD1766
STD1766

STD17NF03LSTD17NF03L-1N-channel 30V - 0.038 - 17A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD17NF03L-1 30V

 9.12. Size:121K  samhop
stu17l01 std17l01.pdf

STD1766
STD1766

GreenProductSTU/D17L01aS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.81 @ VGS=10VSuface Mount Package.-100V -17A94 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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