STD1766 Datasheet and Replacement

STD1766 NPN Silicon Transistor Descriptions Medium power amplifier Collector2,4Features Base P (Collector power dissipation)=2W C 1(Ceramic substrate of 250 0.8t used) Low collector saturation voltage Emitter3: V =0.5V (Typ.) CE(sat) Complementary pair with STB1188 SOT-89 Green device and RoHS compliant device Availab

STD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V

STD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD17N05L 50 V

STD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD17N05L 50 V

STI17NF25 - STD17NF25STF17NF25 - STP17NF25N-channel 250V - 0.14 - 17A - TO-220/FP - DPAK - I2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTD17NF25 250V

STD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05L 50 V

STD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V

STD17NF03LN-CHANNEL 30V - 0.038 - 17A - DPAK/IPAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD17NF03L 30V

STD17NF25, STF17NF25, STP17NF25DatasheetN-channel 250 V, 0.140 typ., 17 A STripFET II Power MOSFETs in DPAK, TO-220FP and TO-220 packagesFeaturesTAB321DPAKVDS RDS(on)max. ID PTOTOrder codeTABSTD17NF25 90 WSTF17NF25 250 V 0.165 17 A 25 W32 3121TO-220FP TO-220 STP17NF25 90 WD(2, TAB) Exceptional dv/dt capability 100% avalanche tested

STD17NF03LSTD17NF03L-1N-channel 30V - 0.038 - 17A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD17NF03L-1 30V

STD17NE03LN - CHANNEL 30V - 0.034 - 17A - DPAKSTripFET " POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD17NE03L 30 V

STD17NF03LSTD17NF03L-1N-channel 30V - 0.038 - 17A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD17NF03L-1 30V

GreenProductSTU/D17L01aS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.81 @ VGS=10VSuface Mount Package.-100V -17A94 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I