STD1766 Specs and Replacement
Type Designator: STD1766
SMD Transistor Code: B2
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-89
STD1766 Substitution
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STD1766 datasheet
STD1766 NPN Silicon Transistor Descriptions Medium power amplifier Collector 2,4 Features Base P (Collector power dissipation)=2W C 1 (Ceramic substrate of 250 0.8t used) Low collector saturation voltage Emitter 3 V =0.5V (Typ.) CE(sat) Complementary pair with STB1188 SOT-89 Green device and RoHS compliant device Availab... See More ⇒
std17n05 std17n05-1 std17n05t4 std17n06 std17n06-1 std17n06t4.pdf ![]()
STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD17N05 50 V ... See More ⇒
std17n05l-1 std17n06l-1 std17n05lt4 std17n06lt4.pdf ![]()
STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD17N05L 50 V ... See More ⇒
STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD17N05L 50 V ... See More ⇒
Detailed specifications: STD123, STD123AS, STD123ASF, STD123SF, STD123U, STD123UF, STD129, STD1664, 2SD669A, STD1862, STD1862L, STD361, STD6528EF, STD6528S, STN2222, STN2222A, STN2222AS
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