2N6384 Datasheet. Specs and Replacement

Type Designator: 2N6384  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO3

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2N6384 datasheet

 ..1. Size:205K  central

2n6383 2n6384 2n6385.pdf pdf_icon

2N6384

TM 2N6383 Central 2N6384 Semiconductor Corp. 2N6385 NPN SILICON POWER DESCRIPTION DARLINGTON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS (TC=25 C) SYMBOL 2N6383 2N6384 2N6385 UNITS Collector-Base Voltage VCBO 40 60 80 V Coll... See More ⇒

 ..2. Size:153K  jmnic

2n6383 2n6384 2n6385.pdf pdf_icon

2N6384

JMnic Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION With TO-3 package Complement to type 2N6648/6649/6650 DARLINGTON High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN DESCRIPTION 1 B... See More ⇒

 ..3. Size:118K  inchange semiconductor

2n6383 2n6384 2n6385.pdf pdf_icon

2N6384

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION With TO-3 package Complement to type 2N6648/6649/6650 DARLINGTON High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN... See More ⇒

 9.1. Size:164K  motorola

2n6387 2n6388.pdf pdf_icon

2N6384

Order this document MOTOROLA by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 Plastic Medium-Power 2N6388* Silicon Transistors *Motorola Preferred Device . . . designed for general purpose amplifier and low speed switching applications. DARLINGTON High DC Current Gain 8 AND 10 AMPERE hFE = 2500 (Typ) @ IC = 4.0 Adc NPN SILICON Collector Emitter Sustaining Voltage... See More ⇒

Detailed specifications: 2N6379, 2N637A, 2N637B, 2N638, 2N6380, 2N6381, 2N6382, 2N6383, 2222A, 2N6385, 2N6386, 2N6387, 2N6388, 2N6389, 2N638A, 2N638B, 2N639

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