SUT509EF Specs and Replacement
Type Designator: SUT509EF
SMD Transistor Code: 3X
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60(50) V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 2(4) pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT-563F
SUT509EF Substitution
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SUT509EF datasheet
SUT509EF Epitaxial planar NPN/PNP silicon transistor Description Complex type bipolar transistor Feature Very small package save PCB area Reduce quantity of parts and mounting cost Both 2SA1980 chip and 2SC5343 chip in SOT-563F package Package SOT-563F Ordering Information Type NO. Marking Package Code SUT509EF SOT-563F 3X Year & Week Code ... See More ⇒
SUT507EF Epitaxial planar NPN silicon transistor Description Complex type bipolar transistor Feature Very small package save PCB area Reduce quantity of parts and mounting cost Two 2SC5343 chips in SOT-563F package Package SOT-563F Ordering Information Type NO. Marking Package Code SUT507EF SOT-563F 6X Year & Week Code Equivalent circuit... See More ⇒
Detailed specifications: SUT484J, SUT485J, SUT486J, SUT487J, SUT488J, SUT495J, SUT497H, SUT507EF, 13003, SUT510EF, SUT562EF, SUT575EF, 4124, 4126, 4128, 5302, 13002AH
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