13003ADA Specs and Replacement
Type Designator: 13003ADA
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
13003ADA Substitution
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13003ADA datasheet
UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 1... See More ⇒
Detailed specifications: SUT510EF , SUT562EF , SUT575EF , 4124 , 4126 , 4128 , 5302 , 13002AH , 2SC1815 , 13003BS , 13003DE , 13003DF , 13003DH , 13003DW , 13003EDA , 13005EC , 2SA1627A .
History: STC722D | 13003B | KSE13009F | 2SA1313Y | HP32B | A1480 | HP32A
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