13003ADA Datasheet. Specs and Replacement
Type Designator: 13003ADA 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
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13003ADA datasheet
UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 1... See More ⇒
Detailed specifications: SUT510EF, SUT562EF, SUT575EF, 4124, 4126, 4128, 5302, 13002AH, A733, 13003BS, 13003DE, 13003DF, 13003DH, 13003DW, 13003EDA, 13005EC, 2SA1627A
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