All Transistors. 13005EC Datasheet

 

13005EC Datasheet and Replacement


   Type Designator: 13005EC
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 65 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO-126 TO-251
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13005EC Datasheet (PDF)

 ..1. Size:158K  utc
 13005ec.pdf pdf_icon

13005EC

UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC =

 8.1. Size:1011K  jilin sino
 3dd13005ed.pdf pdf_icon

13005EC

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13005ED MAIN CHARACTERISTICS Package I 4A CV 450V CEOP (IPAK/TO-126/126F/220HF) 40W CP (DPAK) 50W CP (TO-220/220C/262/263) 75W CTO-220C-S1 TO-220C TO-220 APPLICATIONS Energy-saving light Electronic ba

 8.2. Size:116K  jdsemi
 s13005ed.pdf pdf_icon

13005EC

RS13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 8.3. Size:117K  jdsemi
 13005ed.pdf pdf_icon

13005EC

R13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

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History: 2SC3415S | 3DD13005B3 | 2N3906V | 2SC536S | D882-O-T89R | 2N3904V | KT805AM

Keywords - 13005EC transistor datasheet

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