2SA1627A Specs and Replacement
Type Designator: 2SA1627A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.9 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 42 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO-126 TO-126C TO-252 SOT-223
2SA1627A Substitution
- BJT ⓘ Cross-Reference Search
2SA1627A datasheet
UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES * High voltage * Low collector saturation voltage. * High-speed switching ORDERING INFORMATION Ordering Number Pin Assignment Package Packing ... See More ⇒
UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching 1 TO-126 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ) PARAMETER SYMBOL VALUE UNIT ... See More ⇒
Detailed specifications: 13003ADA, 13003BS, 13003DE, 13003DF, 13003DH, 13003DW, 13003EDA, 13005EC, 8050, 2SC5027E, 2SC5353B, 2SC5889, 2SD2470, 4124D, 4126D, 4128D, 5302D
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