TC200 Specs and Replacement
Type Designator: TC200
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO-92
TC200 Substitution
- BJT ⓘ Cross-Reference Search
TC200 datasheet
UNISONIC TECHNOLOGIES CO., LTD TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR DESCRIPTION The UTC TC200 is an epitaxial planar NPN transistor; it uses UTC s advanced technology to provide the customers with high DC current gain and low collector-emitter saturation voltage, etc. The UTC TC200 is suitable for general purpose and switching ... See More ⇒
SEMICONDUCTOR KTC200 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(2)=25(Min.), (VCE=2V, IC=200mA). N DIM MILLIMETERS Complementary to KTA200. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTER... See More ⇒
Detailed specifications: MJE13009P, MMBT9018, MPSA194, MPSA44H, PZT1816, PZT4033, SB2202, T2096, BC547B, TUL1102, TUL1203, UBV45, ULB121, ULB122, ULB124, UN1066, UN1518
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