All Transistors. TC200 Datasheet

 

TC200 Datasheet and Replacement


   Type Designator: TC200
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO-92
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TC200 Datasheet (PDF)

 ..1. Size:66K  utc
 tc200.pdf pdf_icon

TC200

UNISONIC TECHNOLOGIES CO., LTD TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR DESCRIPTION The UTC TC200 is an epitaxial planar NPN transistor; it uses UTCs advanced technology to provide the customers with high DC current gain and low collector-emitter saturation voltage, etc. The UTC TC200 is suitable for general purpose and switching

 0.1. Size:73K  kec
 ktc200.pdf pdf_icon

TC200

SEMICONDUCTOR KTC200TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B CFEATURES Excellent hFE Linearity: hFE(2)=25(Min.), (VCE=2V, IC=200mA).N DIM MILLIMETERS Complementary to KTA200.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARACTER

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N2061A | 2N3351DCSM | CTP3551 | 2N5811 | BT2944 | 2N6601 | 2N2121

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