UBV45 Datasheet and Replacement
Type Designator: UBV45
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.95 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: TO-92
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UBV45 Datasheet (PDF)
ubv45.pdf

UNISONIC TECHNOLOGIES CO., LTD UBV45 NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The UTC UBV45 is designed for use in Compact FluorescentLamps. FEATURES * High Voltage Capability * Low Sprea
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC155 | CH837UPNGP | EMX1FHA | GES6004 | PBSS4021NZ | 2SC3670B | NPS5910
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History: 2SC155 | CH837UPNGP | EMX1FHA | GES6004 | PBSS4021NZ | 2SC3670B | NPS5910



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