UBV45 Specs and Replacement
Type Designator: UBV45
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.95 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 12
Package: TO-92
UBV45 Substitution
- BJT ⓘ Cross-Reference Search
UBV45 datasheet
UNISONIC TECHNOLOGIES CO., LTD UBV45 NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The UTC UBV45 is designed for use in Compact Fluorescent Lamps. FEATURES * High Voltage Capability * Low Sprea... See More ⇒
Detailed specifications: MPSA44H, PZT1816, PZT4033, SB2202, T2096, TC200, TUL1102, TUL1203, MPSA42, ULB121, ULB122, ULB124, UN1066, UN1518, UN1596, UP1496, UP1753
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