USS5350 Specs and Replacement

Type Designator: USS5350

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 35 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT-223 SOT-89

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USS5350 datasheet

 ..1. Size:151K  utc

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USS5350

UNISONIC TECHNOLOGIES CO., LTD USS5350 Preliminary PNP EPITAXIAL SILICON TRANSISTOR 50V,3A PNP LOW VCE(SAT) TRANSISTOR 1 FEATURES SOT-89 * Low collector-emitter saturation voltage VCE(SAT) * High collector current capability IC and ICM * Higher efficiency leading to less heat generation * Reduced printed-circuit board requirements. * Complement USS4350. 1 SOT-223 O... See More ⇒

Detailed specifications: UP1855, UP1855A, UP1856, UP1868, UP2518, UP2855, USS4350, USS4450, 2N3904, UT2274, X1049A, 2SC2328A, 2SD882S, 8050S, D882SS, HE8051, MMBT1815

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