DTB114E Datasheet. Specs and Replacement

Type Designator: DTB114E  📄📄 

SMD Transistor Code: BB4E

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 56

Noise Figure, dB: -

Package: SOT-23 SOT-323

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DTB114E datasheet

 ..1. Size:190K  utc

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DTB114E

UNISONIC TECHNOLOGIES CO., LTD DTB114E PNP SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead... See More ⇒

 ..2. Size:1026K  kexin

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DTB114E

SMD Type Transistors Digital Transistors DTB114E (KDTB114E) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) 1 2 The bias resistors consist of thin-film resistors with complete +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -... See More ⇒

 0.1. Size:26K  motorola

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DTB114E

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi... See More ⇒

 0.2. Size:49K  motorola

pdtb114et 4.pdf pdf_icon

DTB114E

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi... See More ⇒

Detailed specifications: DTA124T, DTA143E, DTA143T, DTA143X, DTA143Z, DTA144E, DTA144T, DTB113Z, TIP35C, DTB123Y, DTB143E, DTC113T, DTC114E, DTC114T, DTC114Y, DTC115E, DTC115T

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