DTB114E
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTB114E
Código: BB4E
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Ganancia de corriente contínua (hfe): 56
Paquete / Cubierta:
SOT-23
SOT-323
Búsqueda de reemplazo de transistor bipolar DTB114E
DTB114E
Datasheet (PDF)
..1. Size:190K utc
dtb114e.pdf
UNISONIC TECHNOLOGIES CO., LTD DTB114E PNP SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead
..2. Size:1026K kexin
dtb114e.pdf
SMD Type TransistorsDigital TransistorsDTB114E (KDTB114E)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)1 2 The bias resistors consist of thin-film resistors with complete+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -
0.1. Size:26K motorola
pdtb114et p09 sot23.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi
0.2. Size:49K motorola
pdtb114et 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi
0.3. Size:49K philips
pdtb114et 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi
0.4. Size:61K rohm
dtb114ek dtb114es.pdf
TransistorsDigital transistors (built-in resistors)DTB114EK / DTB114ESFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive biasing of theinput. They
0.5. Size:356K rohm
dtb114ek.pdf
DTB114EKDatasheetPNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors)Outline SMT3Parameter ValueOUTVCC50VINIC(MAX.)500mAGNDR110kDTB114EKR2 SOT346(SC59)10kFeatures Inner circuit1) Built-In Biasing Resistors, R1 = R2 = 10k.OUTR1IN2) Built-in bias resistors enable the configuration ofR2 an inverte
0.6. Size:165K diodes
ddtb114eu.pdf
DDTB (xxxx) UDDTB (xxxx) U PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary NPN Types Available (DDTD) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 "Green" Device (Note 3 and 4) B CC 2.00 2.20 Mechanical Data D 0.65 Nom
0.7. Size:163K diodes
ddtb114ec.pdf
DDTB (xxxx) C PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A Complementary NPN Types Available (DDTD) SOT-23 Built-In Biasing Resistors, R1, R2 Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEWB C"Green" Device (Notes 2 and 3) A 0
0.8. Size:244K cystek
dtb114en3.pdf
Spec. No. : C277N3 Issued Date : 2005.11.11 CYStech Electronics Corp.Revised Date : Page No. : 1/5 PNP Digital Transistors (Built-in Resistors) DTB114EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete
0.9. Size:308K lrc
ldtb114eet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTB114EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an 1inverter circuit without connecting external input resistors (see equivalent circuit). 22) The bias resistors consis
0.10. Size:104K chenmko
chdtb114ekgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTB114EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
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