DTB114E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTB114E  📄📄 

Código: BB4E

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Ganancia de corriente contínua (hFE): 56

Encapsulados: SOT-23 SOT-323

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DTB114E datasheet

 ..1. Size:190K  utc
dtb114e.pdf pdf_icon

DTB114E

UNISONIC TECHNOLOGIES CO., LTD DTB114E PNP SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead

 ..2. Size:1026K  kexin
dtb114e.pdf pdf_icon

DTB114E

SMD Type Transistors Digital Transistors DTB114E (KDTB114E) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) 1 2 The bias resistors consist of thin-film resistors with complete +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -

 0.1. Size:26K  motorola
pdtb114et p09 sot23.pdf pdf_icon

DTB114E

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi

 0.2. Size:49K  motorola
pdtb114et 4.pdf pdf_icon

DTB114E

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi

Otros transistores... DTA124T, DTA143E, DTA143T, DTA143X, DTA143Z, DTA144E, DTA144T, DTB113Z, TIP35C, DTB123Y, DTB143E, DTC113T, DTC114E, DTC114T, DTC114Y, DTC115E, DTC115T