BLD101D Specs and Replacement
Type Designator: BLD101D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
BLD101D Substitution
- BJT ⓘ Cross-Reference Search
BLD101D datasheet
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D /D SERIES TRANSISTORS BLD101D NPN D /D SERIES TRANSISTORS BLD101D NPN D /D SE... See More ⇒
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS BLD102D NPN D / D SERIES TRANSISTORS BLD102D NPN D / D... See More ⇒
Detailed specifications: BUL6822, BUL6822A, BUL6823, BUL6823A, MJE13003BR, MJE13003BRH, 2SB1334A, MJE13009A, BC639, BLD102D, BLD112D, BLD122D, BLD122DL, BLD123D, BLD123DAL, BLD123DL, BLD128D
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