All Transistors. BLD112D Datasheet

 

BLD112D Datasheet and Replacement


   Type Designator: BLD112D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO126 TO126S TO92 TO92S
 

 BLD112D Substitution

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BLD112D Datasheet (PDF)

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BLD112D

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D /D SERIES TRANSISTORS BLD112DNPN D /D SERIES TRANSISTORS BLD112DNPN D /D SE

Datasheet: BUL6823 , BUL6823A , MJE13003BR , MJE13003BRH , 2SB1334A , MJE13009A , BLD101D , BLD102D , 2SC828 , BLD122D , BLD122DL , BLD123D , BLD123DAL , BLD123DL , BLD128D , BLD128DA , BLD13005DX .

History: 2N3450 | H6084B | 2N2270AL

Keywords - BLD112D transistor datasheet

 BLD112D cross reference
 BLD112D equivalent finder
 BLD112D lookup
 BLD112D substitution
 BLD112D replacement

 

 
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