BLD112D Specs and Replacement
Type Designator: BLD112D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO126 TO126S TO92 TO92S
BLD112D Substitution
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BLD112D datasheet
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D /D SERIES TRANSISTORS BLD112D NPN D /D SERIES TRANSISTORS BLD112D NPN D /D SE... See More ⇒
Detailed specifications: BUL6823, BUL6823A, MJE13003BR, MJE13003BRH, 2SB1334A, MJE13009A, BLD101D, BLD102D, 2SC2383, BLD122D, BLD122DL, BLD123D, BLD123DAL, BLD123DL, BLD128D, BLD128DA, BLD13005DX
Keywords - BLD112D pdf specs
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