BLDB128D Datasheet and Replacement
Type Designator: BLDB128D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO262 TO263
BLDB128D Substitution
BLDB128D Datasheet (PDF)
bldb128d.pdf

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS BLDB128DNPN D / D SERIES TRANSISTORS BLDB128DNPN D /
Datasheet: BLD135D , BLD135DH , BLD135DL , BLD137D , BLD137DL , BLD139D , BLD139DL , BLD155DL , TIP41C , BUL68H5T , MJE13001AH , MJE13001H , MJE13002AHT , MJE13003HT , LB120A3 , 2N4401A3 , 2N4403A3 .
History: BD107A | BUX62 | KSR1211 | NR431DR | LDTA123JM3T5G | BD370A-6 | 2SC3529
Keywords - BLDB128D transistor datasheet
BLDB128D cross reference
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History: BD107A | BUX62 | KSR1211 | NR431DR | LDTA123JM3T5G | BD370A-6 | 2SC3529



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