BLDB128D Specs and Replacement
Type Designator: BLDB128D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
BLDB128D Substitution
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BLDB128D datasheet
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS BLDB128D NPN D / D SERIES TRANSISTORS BLDB128D NPN D /... See More ⇒
Detailed specifications: BLD135D , BLD135DH , BLD135DL , BLD137D , BLD137DL , BLD139D , BLD139DL , BLD155DL , BC547 , BUL68H5T , MJE13001AH , MJE13001H , MJE13002AHT , MJE13003HT , LB120A3 , 2N4401A3 , 2N4403A3 .
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