All Transistors. BTA3513I3 Datasheet

 

BTA3513I3 Datasheet and Replacement


   Type Designator: BTA3513I3
   SMD Transistor Code: A3513
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 98 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TO251
 
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BTA3513I3 Datasheet (PDF)

 ..1. Size:247K  cystek
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BTA3513I3

Spec. No. : C607I3 Issued Date : 2012.02.10 CYStech Electronics Corp.Revised Date : Page No. : 1/9 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -80VIC -10ABTA3513I3 RCESAT 75m typ. Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline TO-251 BTA3513I3BBase CCollector B C

 7.1. Size:318K  cystek
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BTA3513I3

Spec. No. : C607J3 Issued Date : 2010.12.08 CYStech Electronics Corp.Revised Date : Page No. : 1/8 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -80VIC -8ABTA3513J3 RCESAT 75m typ. Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline BTA3513J3 TO-252(DPAK) BBase CCollector

Datasheet: BTA1774C3 , BTA1797M3 , BTA1900M3 , BTA1952E3 , BTA1952I3 , BTA1952J3 , BTA1972K3 , BTA2029Y3 , 2SC2655 , BTA3513J3 , BTA4403A3 , BTA9012A3 , BTB589N3 , BTB718N3 , BTB772AJ3 , BTB772AM3 , BTB772I3 .

History: MMBT5401R

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