BTB589N3 Specs and Replacement
Type Designator: BTB589N3
SMD Transistor Code: AH
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: SOT23
BTB589N3 Substitution
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BTB589N3 datasheet
Spec. No. C314N3 Issued Date 2005.04.20 CYStech Electronics Corp. Revised Date 2009.05.08 Page No. 1/ 6 Low Saturation PNP Epitaxial Planar Transistor BTB589N3 Description The BTB589N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous. Features Low VCE(SAT) , VCE(SAT) -0.3V (I / I =-1A/-100mA) C B L... See More ⇒
Spec. No. C240M3 CYStech Electronics Corp. Issued Date 2012.10.18 Revised Date 2013.08.07 Page No. 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB5839M3 Features Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline BTB5893M3 SOT-89 B Ba... See More ⇒
Detailed specifications: BTA1952I3 , BTA1952J3 , BTA1972K3 , BTA2029Y3 , BTA3513I3 , BTA3513J3 , BTA4403A3 , BTA9012A3 , 2SC2655 , BTB718N3 , BTB772AJ3 , BTB772AM3 , BTB772I3 , BTB772J3 , BTB772ST3 , BTB772T3 , BTB818AG6 .
History: A1267
Keywords - BTB589N3 pdf specs
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History: A1267
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