BTB589N3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTB589N3
SMD Transistor Code: AH
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT23
BTB589N3 Transistor Equivalent Substitute - Cross-Reference Search
BTB589N3 Datasheet (PDF)
btb589n3.pdf
Spec. No. : C314N3 Issued Date : 2005.04.20 CYStech Electronics Corp.Revised Date :2009.05.08 Page No. : 1/ 6 Low Saturation PNP Epitaxial Planar Transistor BTB589N3Description The BTB589N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous. Features Low VCE(SAT) , VCE(SAT) -0.3V (I / I =-1A/-100mA) C B L
btb5839m3.pdf
Spec. No. : C240M3 CYStech Electronics Corp. Issued Date : 2012.10.18 Revised Date : 2013.08.07 Page No. : 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB5839M3 Features Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline BTB5893M3 SOT-89 BBa
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
