All Transistors. BTB826M3 Datasheet

 

BTB826M3 Datasheet and Replacement


   Type Designator: BTB826M3
   SMD Transistor Code: AE
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: SOT89
 

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BTB826M3 Datasheet (PDF)

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BTB826M3

Spec. No. : C812M3 Issued Date : 2003.05.25 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB826M3 Features Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Pb-free lead plating package Symbol Outline BTB826M3 SOT-89 BBase CCollect

Datasheet: BTB772AJ3 , BTB772AM3 , BTB772I3 , BTB772J3 , BTB772ST3 , BTB772T3 , BTB818AG6 , BTB818N6 , 2SD669 , BTB857AD3 , BTB857D3 , BTB1184J3 , BTB1188AM3 , BTB1188M3 , BTB1188M3R , BTB1197N3 , BTB1198A3 .

History: 2SC2673 | 2SC5176 | BUP51 | ST11 | 3CA1203 | ST4202 | 3DG1740M

Keywords - BTB826M3 transistor datasheet

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