BTB826M3 Specs and Replacement
Type Designator: BTB826M3
SMD Transistor Code: AE
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: SOT89
BTB826M3 Substitution
- BJT ⓘ Cross-Reference Search
BTB826M3 datasheet
Spec. No. C812M3 Issued Date 2003.05.25 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB826M3 Features Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Pb-free lead plating package Symbol Outline BTB826M3 SOT-89 B Base C Collect... See More ⇒
Detailed specifications: BTB772AJ3, BTB772AM3, BTB772I3, BTB772J3, BTB772ST3, BTB772T3, BTB818AG6, BTB818N6, TIP2955, BTB857AD3, BTB857D3, BTB1184J3, BTB1188AM3, BTB1188M3, BTB1188M3R, BTB1197N3, BTB1198A3
Keywords - BTB826M3 pdf specs
BTB826M3 cross reference
BTB826M3 equivalent finder
BTB826M3 pdf lookup
BTB826M3 substitution
BTB826M3 replacement
