All Transistors. BTB826M3 Datasheet

 

BTB826M3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BTB826M3
   SMD Transistor Code: AE
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: SOT89

 BTB826M3 Transistor Equivalent Substitute - Cross-Reference Search

   

BTB826M3 Datasheet (PDF)

 ..1. Size:243K  cystek
 btb826m3.pdf

BTB826M3 BTB826M3

Spec. No. : C812M3 Issued Date : 2003.05.25 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB826M3 Features Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Pb-free lead plating package Symbol Outline BTB826M3 SOT-89 BBase CCollect

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: 2N5229

 

 
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