All Transistors. BTB857D3 Datasheet

 

BTB857D3 Datasheet and Replacement


   Type Designator: BTB857D3
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TO126ML
 

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BTB857D3 Datasheet (PDF)

 ..1. Size:241K  cystek
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BTB857D3

Spec. No. : C601D3 Issued Date : 2008.12.23 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB857D3 Features Low VCE(sat), VCE(sat)=-0.3V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103D3 RoHS compliant package Symbol Outline BTB857D

 8.1. Size:220K  cystek
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BTB857D3

Spec. No. : C601D3 Issued Date : 2008.12.23 CYStech Electronics Corp.Revised Date : 2012.02.17 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB857AD3 Features Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA RoHS compliant package Symbol Outline BTB857AD3 TO-126ML BBa

Datasheet: BTB772I3 , BTB772J3 , BTB772ST3 , BTB772T3 , BTB818AG6 , BTB818N6 , BTB826M3 , BTB857AD3 , D882P , BTB1184J3 , BTB1188AM3 , BTB1188M3 , BTB1188M3R , BTB1197N3 , BTB1198A3 , BTB1198K3 , BTB1198M3 .

History: BRT60 | BUF410AI | 2SA1812 | TMPA812M3 | 2SB333H | 2SC2174 | BCP51-10

Keywords - BTB857D3 transistor datasheet

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