BTB857D3 Specs and Replacement

Type Designator: BTB857D3

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO126ML

 BTB857D3 Substitution

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BTB857D3 datasheet

 ..1. Size:241K  cystek

 btb857d3.pdf pdf_icon

BTB857D3

Spec. No. C601D3 Issued Date 2008.12.23 CYStech Electronics Corp. Revised Date Page No. 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB857D3 Features Low VCE(sat), VCE(sat)=-0.3V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103D3 RoHS compliant package Symbol Outline BTB857D... See More ⇒

 8.1. Size:220K  cystek

 btb857ad3.pdf pdf_icon

BTB857D3

Spec. No. C601D3 Issued Date 2008.12.23 CYStech Electronics Corp. Revised Date 2012.02.17 Page No. 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB857AD3 Features Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA RoHS compliant package Symbol Outline BTB857AD3 TO-126ML B Ba... See More ⇒

Detailed specifications: BTB772I3, BTB772J3, BTB772ST3, BTB772T3, BTB818AG6, BTB818N6, BTB826M3, BTB857AD3, 2SC2240, BTB1184J3, BTB1188AM3, BTB1188M3, BTB1188M3R, BTB1197N3, BTB1198A3, BTB1198K3, BTB1198M3

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