BTB857D3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTB857D3
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO126ML
BTB857D3 Transistor Equivalent Substitute - Cross-Reference Search
BTB857D3 Datasheet (PDF)
btb857d3.pdf
Spec. No. : C601D3 Issued Date : 2008.12.23 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB857D3 Features Low VCE(sat), VCE(sat)=-0.3V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103D3 RoHS compliant package Symbol Outline BTB857D
btb857ad3.pdf
Spec. No. : C601D3 Issued Date : 2008.12.23 CYStech Electronics Corp.Revised Date : 2012.02.17 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB857AD3 Features Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA RoHS compliant package Symbol Outline BTB857AD3 TO-126ML BBa
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
