All Transistors. BTB1386M3 Datasheet

 

BTB1386M3 Datasheet, Equivalent, Cross Reference Search

Type Designator: BTB1386M3

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: SOT89

BTB1386M3 Transistor Equivalent Substitute - Cross-Reference Search

 

BTB1386M3 Datasheet (PDF)

1.1. btb1386m3.pdf Size:262K _cystek

BTB1386M3
BTB1386M3

Spec. No. : C815M3 Issued Date : 2005.03.25 CYStech Electronics Corp. Revised Date : 2014.05.20 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB1386M3 Features • Low VCE(sat), VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics • Complementary to BTD2098M3 • Pb-free lead plating and halogen-free package Sym

3.1. btb1386q8.pdf Size:165K _cystek

BTB1386M3
BTB1386M3

Spec. No. : C815Q8 Issued Date : 2005.06.21 CYStech Electronics Corp. Revised Date : 2005.12.21 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1386Q8 Features • Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Pb-free package Equivalent Circuit Outline BTB1386Q8 SO-8 C:Collector B

Datasheet: BTB1236AI3 , BTB1236AJ3 , BTB1236AK3 , BTB1236AM3 , BTB1236AT3 , BTB1238AL3 , BTB1238AM3 , BTB1243I3 , 2N3904 , BTB1386Q8 , BTB1412J3 , BTB1424A3 , BTB1424AD3 , BTB1424AM3 , BTB1424AT3 , BTB1424FP , BTB1424L3 .

 


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