BTB1386Q8 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTB1386Q8
SMD Transistor Code: B1386
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOP8
BTB1386Q8 Transistor Equivalent Substitute - Cross-Reference Search
BTB1386Q8 Datasheet (PDF)
btb1386q8.pdf
Spec. No. : C815Q8 Issued Date : 2005.06.21 CYStech Electronics Corp.Revised Date : 2005.12.21 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1386Q8 Features Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -3A / -0.15A Excellent DC current gain characteristics Pb-free package Equivalent Circuit Outline BTB1386Q8 SO-8 CCollector B
btb1386m3.pdf
Spec. No. : C815M3 Issued Date : 2005.03.25 CYStech Electronics Corp.Revised Date : 2014.05.20 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB1386M3 Features Low VCE(sat), VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA Excellent DC current gain characteristics Complementary to BTD2098M3 Pb-free lead plating and halogen-free package Sym
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N2954 | 2SD782 | RS7530
