BTB1386Q8 Specs and Replacement
Type Designator: BTB1386Q8
SMD Transistor Code: B1386
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: SOP8
BTB1386Q8 Substitution
- BJT ⓘ Cross-Reference Search
BTB1386Q8 datasheet
Spec. No. C815M3 Issued Date 2005.03.25 CYStech Electronics Corp. Revised Date 2014.05.20 Page No. 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB1386M3 Features Low VCE(sat), VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA Excellent DC current gain characteristics Complementary to BTD2098M3 Pb-free lead plating and halogen-free package Sym... See More ⇒
Detailed specifications: BTB1236AJ3, BTB1236AK3, BTB1236AM3, BTB1236AT3, BTB1238AL3, BTB1238AM3, BTB1243I3, BTB1386M3, 2SC5200, BTB1412J3, BTB1424A3, BTB1424AD3, BTB1424AM3, BTB1424AT3, BTB1424FP, BTB1424L3, BTB1424N3
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