BTB4511J3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTB4511J3
SMD Transistor Code: B4511
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 65 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO252
BTB4511J3 Transistor Equivalent Substitute - Cross-Reference Search
BTB4511J3 Datasheet (PDF)
btb4511j3.pdf
Spec. No. : C662J3 Issued Date : 2010.10.26 CYStech Electronics Corp.Revised Date : 2010.12.08 Page No. : 1/6 PNP Epitaxial Planar High Current (High Performance) Transistor BTB4511J3Features 5 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Excellent gain characteristics specified up to 10 Amps Extremely low equivalent
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .