BTB4511J3 Specs and Replacement
Type Designator: BTB4511J3
SMD Transistor Code: B4511
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 65 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO252
BTB4511J3 Substitution
- BJT ⓘ Cross-Reference Search
BTB4511J3 datasheet
Spec. No. C662J3 Issued Date 2010.10.26 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/6 PNP Epitaxial Planar High Current (High Performance) Transistor BTB4511J3 Features 5 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Excellent gain characteristics specified up to 10 Amps Extremely low equivalent... See More ⇒
Detailed specifications: BTB1424N3, BTB1427M3, BTB1498N3, BTB1580J3, BTB1580L3, BTB1580M3, BTB1590N3, BTB4110D3, TIP122, BTB5140N3, BTB5213L3, BTB5240N3, BTB5839M3, BTB9050N3, BTB9435J3, BTB9435L3, BTC945A3
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