BTB5213L3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTB5213L3
SMD Transistor Code: AK
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT223
BTB5213L3 Transistor Equivalent Substitute - Cross-Reference Search
BTB5213L3 Datasheet (PDF)
btb5213l3.pdf
Spec. No. : C824L3 Issued Date : 2007.03.29 CYStech Electronics Corp.Revised Date : 2010.09.06 Page No. : 1/7 General Purpose PNP Epitaxial Planar Transistor BTB5213L3Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features High collector current and low V . CE(SAT) Complement to B
btb5240n3.pdf
Spec. No. : C195N3 Issued Date : 2013.05.10 CYStech Electronics Corp.Revised Date : Page No. : 1/8 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -40VIC -2ABTB5240N3RCESAT(typ.) 0.106 Features Excellent DC current gain characteristics Low Saturation Voltage V =-0.18V(typ)(I =-2A, I =-200mA). CE(sat) C B Pb-free lead plating and halogen-free pac
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
