BTB9050N3 Specs and Replacement
Type Designator: BTB9050N3
SMD Transistor Code: LL
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT23
BTB9050N3 Substitution
- BJT ⓘ Cross-Reference Search
BTB9050N3 datasheet
Spec. No. C619N3 Issued Date 2012.08.21 CYStech Electronics Corp. Revised Date Page No. 1/7 High Voltage PNP Epitaxial Planar Transistor BTB9050N3 Description High breakdown voltage. (BV =-500V) CEO Low saturation voltage, typical V =-0.13V at Ic/I =-20mA/-2mA. CE(sat) B Complementary to BTNA45N3 Pb-free package Symbol Outline SOT-23 BTB9050N... See More ⇒
Detailed specifications: BTB1580M3, BTB1590N3, BTB4110D3, BTB4511J3, BTB5140N3, BTB5213L3, BTB5240N3, BTB5839M3, D882, BTB9435J3, BTB9435L3, BTC945A3, BTC1510E3, BTC1510F3, BTC1510FP, BTC1510I3, BTC1510J3
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