All Transistors. BTB9050N3 Datasheet

 

BTB9050N3 Datasheet and Replacement


   Type Designator: BTB9050N3
   SMD Transistor Code: LL
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23
 

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BTB9050N3 Datasheet (PDF)

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BTB9050N3

Spec. No. : C619N3 Issued Date : 2012.08.21 CYStech Electronics Corp.Revised Date : Page No. : 1/7 High Voltage PNP Epitaxial Planar Transistor BTB9050N3Description High breakdown voltage. (BV =-500V) CEO Low saturation voltage, typical V =-0.13V at Ic/I =-20mA/-2mA. CE(sat) B Complementary to BTNA45N3 Pb-free package Symbol Outline SOT-23 BTB9050N

Datasheet: BTB1580M3 , BTB1590N3 , BTB4110D3 , BTB4511J3 , BTB5140N3 , BTB5213L3 , BTB5240N3 , BTB5839M3 , A1941 , BTB9435J3 , BTB9435L3 , BTC945A3 , BTC1510E3 , BTC1510F3 , BTC1510FP , BTC1510I3 , BTC1510J3 .

History: 2SD1219 | ST2SD2150U | MJD117 | BD910 | 2SC1299F | LMUN5135DW1T1G | TN3900

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