BTB9435J3 Specs and Replacement
Type Designator: BTB9435J3
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: TO252
BTB9435J3 Substitution
- BJT ⓘ Cross-Reference Search
BTB9435J3 datasheet
Spec. No. C809J3 Issued Date 2008.06.12 CYStech Electronics Corp. Revised Date 2014.03.25 Page 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB9435J3 Features Low VCE(sat) Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline TO-252 BTB9435J3 (DPAK) B Base B C E C Collector E Emitter O... See More ⇒
Spec. No. C809L3 CYStech Electronics Corp. Issued Date 2009.01.16 Revised Date Page 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB9435L3 Features Low VCE(sat) Excellent current gain characteristics RoHS compliant package Symbol Outline BTB9435L3 SOT-223 C E C B Base B C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) P... See More ⇒
Detailed specifications: BTB1590N3, BTB4110D3, BTB4511J3, BTB5140N3, BTB5213L3, BTB5240N3, BTB5839M3, BTB9050N3, BC557, BTB9435L3, BTC945A3, BTC1510E3, BTC1510F3, BTC1510FP, BTC1510I3, BTC1510J3, BTC1510T3
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