BTB9435J3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTB9435J3
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO252
BTB9435J3 Transistor Equivalent Substitute - Cross-Reference Search
BTB9435J3 Datasheet (PDF)
btb9435j3.pdf
Spec. No. : C809J3 Issued Date : 2008.06.12 CYStech Electronics Corp. Revised Date: 2014.03.25 Page:1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB9435J3 Features Low VCE(sat) Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline TO-252 BTB9435J3(DPAK) BBase B C E CCollector EEmitter O
btb9435l3.pdf
Spec. No. : C809L3 CYStech Electronics Corp. Issued Date : 2009.01.16 Revised Date: Page:1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB9435L3 Features Low VCE(sat) Excellent current gain characteristics RoHS compliant package Symbol Outline BTB9435L3SOT-223 C E C BBase B CCollector EEmitter Absolute Maximum Ratings (Ta=25C) P
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
