BTC2383K3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTC2383K3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6.2 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TO92L
BTC2383K3 Transistor Equivalent Substitute - Cross-Reference Search
BTC2383K3 Datasheet (PDF)
btc2383k3.pdf
Spec. No. : C625K3 Issued Date : 2014.04.17 CYStech Electronics Corp.Revised Date : Page No. : 1/8 NPN Epitaxial Planar TransistorBVCEO 160VIC 1ABTC2383K3RCESAT(MAX) 1 Features High breakdown voltage , BV =160V CEO Low Saturation Voltage, V =0.2V(typ)@I =500mA, I =50mA CE(sat) C B Complementary to BTA1013K3 Pb-free lead plating and halogen-free
btc2383a3.pdf
Spec. No. : C316 Issued Date : 2005.12.21 CYStech Electronics Corp.Revised Date : 2006.03.17 Page No. : 1/9 General Purpose NPN Epitaxial Planar Transistor BTC2383A3Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA1013A3 Pb-free package Symbol Outlin
btc2328ak3.pdf
Spec. No. : C858K3 Issued Date : 2014.11.24 CYStech Electronics Corp.Revised Date : Page No. : 1/8 NPN Epitaxial Planar TransistorBVCEO 30VIC 2ABTC2328AK3RCESAT(MAX) 333m Features Low Saturation Voltage, V =0.5V(max)@I =1.5A, I =30mA CE(sat) C B Complementary to BTA928AK3 Pb-free lead plating and halogen-free package Symbol Outline TO-92L BTC2328
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N6732
