BTC2655K3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTC2655K3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO92L
BTC2655K3 Transistor Equivalent Substitute - Cross-Reference Search
BTC2655K3 Datasheet (PDF)
btc2655k3.pdf
Spec. No. : C602K3 Issued Date : 2011.12.21 CYStech Electronics Corp.Revised Date :2013.12.25 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60VBTC2655K3IC 2ARCESAT(max) 300m Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating packa
btc2655s3.pdf
Spec. No. : C602S3 Issued Date : 2012.04.12 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 50VBTC2655S3IC 2ARCESAT(max) 300m Features High breakdown voltage, BV 50V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating package Symbo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: FXT755
