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BTC2655K3 Specs and Replacement


   Type Designator: BTC2655K3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92L
 

 BTC2655K3 Substitution

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BTC2655K3 detailed specifications

 ..1. Size:284K  cystek
 btc2655k3.pdf pdf_icon

BTC2655K3

Spec. No. C602K3 Issued Date 2011.12.21 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60V BTC2655K3 IC 2A RCESAT(max) 300m Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating packa... See More ⇒

 7.1. Size:261K  cystek
 btc2655s3.pdf pdf_icon

BTC2655K3

Spec. No. C602S3 Issued Date 2012.04.12 CYStech Electronics Corp. Revised Date Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 50V BTC2655S3 IC 2A RCESAT(max) 300m Features High breakdown voltage, BV 50V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating package Symbo... See More ⇒

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