BTC3097T3 Specs and Replacement

Type Designator: BTC3097T3

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 1600 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 24

Noise Figure, dB: -

Package: TO126

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BTC3097T3 datasheet

 ..1. Size:239K  cystek

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BTC3097T3

Spec. No. C6633 Issued Date 2012.01.19 CYStech Electronics Corp. Revised Date Page No. 1/6 High Voltage NPN Triple Diffused Planar Transistor BTC3097T3 Features High voltage, BVCBO=1600V min., BVCEO=800V min. Pb-free lead plating package Symbol Outline BTC3097T3 TO-126 B Base C Collector E Emitter B C E Absolute Maximum Ratings (Ta=25 C) ... See More ⇒

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