All Transistors. BTC3097T3 Datasheet

 

BTC3097T3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BTC3097T3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 1600 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 24
   Noise Figure, dB: -
   Package: TO126

 BTC3097T3 Transistor Equivalent Substitute - Cross-Reference Search

   

BTC3097T3 Datasheet (PDF)

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 btc3097t3.pdf

BTC3097T3 BTC3097T3

Spec. No. : C6633 Issued Date : 2012.01.19 CYStech Electronics Corp.Revised Date : Page No. : 1/6 High Voltage NPN Triple Diffused Planar Transistor BTC3097T3 Features High voltage, BVCBO=1600V min., BVCEO=800V min. Pb-free lead plating package Symbol Outline BTC3097T3TO-126 BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C)

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FZT795A | GE10007

 

 
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