BTC3149E3 Specs and Replacement
Type Designator: BTC3149E3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 1600 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 24
Package: TO220
BTC3149E3 Substitution
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BTC3149E3 datasheet
Spec. No. C663E3 Issued Date 2012.02.13 CYStech Electronics Corp. Revised Date Page No. 1/6 High Voltage NPN Triple Diffused Planar Transistor BTC3149E3 Features High voltage, BVCBO=1600V min., BVCEO=800V min. Pb-free lead plating package Symbol Outline BTC3149E3 TO-220 B Base C Collector E Emitter B C E Absolute Maximum Ratings (Ta=25 C) ... See More ⇒
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