All Transistors. BTC3149E3 Datasheet

 

BTC3149E3 Datasheet and Replacement


   Type Designator: BTC3149E3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 1600 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 24
   Noise Figure, dB: -
   Package: TO220
 

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BTC3149E3 Datasheet (PDF)

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BTC3149E3

Spec. No. : C663E3 Issued Date : 2012.02.13 CYStech Electronics Corp.Revised Date : Page No. : 1/6 High Voltage NPN Triple Diffused Planar Transistor BTC3149E3 Features High voltage, BVCBO=1600V min., BVCEO=800V min. Pb-free lead plating package Symbol Outline BTC3149E3TO-220 BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C)

Datasheet: BTC2881E3 , BTC2881FP , BTC2881J3 , BTC2881L3 , BTC2881M3 , BTC2882J3 , BTC2883J3 , BTC3097T3 , C3198 , BTC3356N3 , BTC3415A3 , BTC3838N3 , BTC3906L3 , BTC3906M3 , BTC3906N3 , BTC3906N3G , BTC3906S3 .

History: BTB9435L3 | 2SD2675 | GT403J | D12E126 | 2SC1030A | OC78N | BSW19VI

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