BTC3356N3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTC3356N3
SMD Transistor Code: CK
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 6500 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT23
BTC3356N3 Transistor Equivalent Substitute - Cross-Reference Search
BTC3356N3 Datasheet (PDF)
btc3356n3.pdf
Spec. No. : C622N3 Issued Date : 2013.03.06 CYStech Electronics Corp.Revised Date : 2013.04.09 Page No. : 1/7 Microwave Low Noise Amplifier NPN Silicon Epitaxial Planar Transistor BTC3356N3Description The BTC3356N3 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. Low Cre. Typ. Cob=0.6pF Pb-free and halogen-fre
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2SA1027