BTC3356N3 Specs and Replacement
Type Designator: BTC3356N3
SMD Transistor Code: CK
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 6500 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT23
BTC3356N3 Substitution
- BJT ⓘ Cross-Reference Search
BTC3356N3 datasheet
Spec. No. C622N3 Issued Date 2013.03.06 CYStech Electronics Corp. Revised Date 2013.04.09 Page No. 1/7 Microwave Low Noise Amplifier NPN Silicon Epitaxial Planar Transistor BTC3356N3 Description The BTC3356N3 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. Low Cre. Typ. Cob=0.6pF Pb-free and halogen-fre... See More ⇒
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