All Transistors. BTC3356N3 Datasheet

 

BTC3356N3 Datasheet and Replacement


   Type Designator: BTC3356N3
   SMD Transistor Code: CK
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 6500 MHz
   Collector Capacitance (Cc): 0.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT23
 

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BTC3356N3 Datasheet (PDF)

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BTC3356N3

Spec. No. : C622N3 Issued Date : 2013.03.06 CYStech Electronics Corp.Revised Date : 2013.04.09 Page No. : 1/7 Microwave Low Noise Amplifier NPN Silicon Epitaxial Planar Transistor BTC3356N3Description The BTC3356N3 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. Low Cre. Typ. Cob=0.6pF Pb-free and halogen-fre

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History: D40D6 | BD203F | 2N4403TF | BF392M | 2SC2655-O | DMA56604 | BTC2883J3

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