BTC5095S3 Specs and Replacement

Type Designator: BTC5095S3

SMD Transistor Code: TE

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 18 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 9000 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT323

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BTC5095S3 datasheet

 ..1. Size:436K  cystek

 btc5095s3.pdf pdf_icon

BTC5095S3

Spec. No. C212S3 Issued Date 2003.08.15 CYStech Electronics Corp. Revised Date 2014.04.25 Page No. 1/ 11 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5095S3 Description The BTC5095S3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol Outline BTC5095S3 SOT-323 B Base C Collector E Emitter Features... See More ⇒

 8.1. Size:176K  cystek

 btc5094n3.pdf pdf_icon

BTC5095S3

Spec. No. C212N3 Issued Date 2002.05.08 CYStech Electronics Corp. Revised Date 2006.03.14 Page No. 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5094N3 Description The BTC5094N3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol Outline BTC5094N3 SOT-23 B Base C Collector E Emitter Features ... See More ⇒

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