BTC5103I3 Specs and Replacement
Type Designator: BTC5103I3
SMD Transistor Code: C5103
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 82
Noise Figure, dB: -
Package: TO251
BTC5103I3 Transistor Equivalent Substitute - Cross-Reference Search
BTC5103I3 detailed specifications
btc5103i3.pdf
Spec. No. C651I3 Issued Date 2005.10.05 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/5 High Speed Switching Transistor BVCEO 60V IC 5A BTC5103I3 RCESAT 110m Features Low VCE(sat), VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A High Switching Speed Wide SOA Complementary to BTA1952I3 RoHS compliant package Symbol Outline... See More ⇒
btc5181wc3.pdf
Spec. No. C213WC3 Issued Date 2003.08.15 CYStech Electronics Corp. Revised Date Page No. 1/3 High Frequency NPN Epitaxial Planar Transistor BTC5181WC3 Description The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol Outline SOT-523 BTC5181WC3 B Base C Collector E Emitter Features ... See More ⇒
Detailed specifications: BTC4505A3 , BTC4505M3 , BTC4505N3 , BTC4617C3 , BTC4620D3 , BTC4672M3 , BTC5094N3 , BTC5095S3 , 2SD669 , BTC5181WC3 , BTC5658Y3 , BTC5706A3 , BTC5706I3 , BTC5706J3 , BTC9013A3 , BTC9014A3 , BTD142F3 .
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