BTC5103I3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTC5103I3
SMD Transistor Code: C5103
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 82
Noise Figure, dB: -
Package: TO251
BTC5103I3 Transistor Equivalent Substitute - Cross-Reference Search
BTC5103I3 Datasheet (PDF)
btc5103i3.pdf
Spec. No. : C651I3 Issued Date : 2005.10.05 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/5 High Speed Switching Transistor BVCEO 60VIC 5ABTC5103I3 RCESAT 110m Features Low VCE(sat), VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A High Switching Speed Wide SOA Complementary to BTA1952I3 RoHS compliant package Symbol Outline
btc5181wc3.pdf
Spec. No. : C213WC3 Issued Date : 2003.08.15 CYStech Electronics Corp. Revised Date : Page No. : 1/3 High Frequency NPN Epitaxial Planar Transistor BTC5181WC3 Description The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol Outline SOT-523 BTC5181WC3 BBase CCollector EEmitter Features
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA1015L
