All Transistors. BTC5181WC3 Datasheet

 

BTC5181WC3 Datasheet and Replacement


   Type Designator: BTC5181WC3
   SMD Transistor Code: T1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.03 W
   Maximum Collector-Base Voltage |Vcb|: 5 V
   Maximum Collector-Emitter Voltage |Vce|: 3 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 12000 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT523
 

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BTC5181WC3 Datasheet (PDF)

 ..1. Size:158K  cystek
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BTC5181WC3

Spec. No. : C213WC3 Issued Date : 2003.08.15 CYStech Electronics Corp. Revised Date : Page No. : 1/3 High Frequency NPN Epitaxial Planar Transistor BTC5181WC3 Description The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol Outline SOT-523 BTC5181WC3 BBase CCollector EEmitter Features

 9.1. Size:213K  cystek
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BTC5181WC3

Spec. No. : C651I3 Issued Date : 2005.10.05 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/5 High Speed Switching Transistor BVCEO 60VIC 5ABTC5103I3 RCESAT 110m Features Low VCE(sat), VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A High Switching Speed Wide SOA Complementary to BTA1952I3 RoHS compliant package Symbol Outline

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History: BD682A

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