BTC5181WC3 Specs and Replacement

Type Designator: BTC5181WC3

SMD Transistor Code: T1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.03 W

Maximum Collector-Base Voltage |Vcb|: 5 V

Maximum Collector-Emitter Voltage |Vce|: 3 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 12000 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT523

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BTC5181WC3 datasheet

 ..1. Size:158K  cystek

 btc5181wc3.pdf pdf_icon

BTC5181WC3

Spec. No. C213WC3 Issued Date 2003.08.15 CYStech Electronics Corp. Revised Date Page No. 1/3 High Frequency NPN Epitaxial Planar Transistor BTC5181WC3 Description The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol Outline SOT-523 BTC5181WC3 B Base C Collector E Emitter Features ... See More ⇒

 9.1. Size:213K  cystek

 btc5103i3.pdf pdf_icon

BTC5181WC3

Spec. No. C651I3 Issued Date 2005.10.05 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/5 High Speed Switching Transistor BVCEO 60V IC 5A BTC5103I3 RCESAT 110m Features Low VCE(sat), VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A High Switching Speed Wide SOA Complementary to BTA1952I3 RoHS compliant package Symbol Outline... See More ⇒

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