BTD1980J3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD1980J3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO-252
BTD1980J3 Transistor Equivalent Substitute - Cross-Reference Search
BTD1980J3 Datasheet (PDF)
btd1980j3.pdf
Spec. No. : C654J3 Issued Date : 2004.03.18 CYStech Electronics Corp.Revised Date :2209.02.04 Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 120VBTD1980J3 IC 4ARCESAT 600m Description The BTD1980J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Equivalent Circuit Outline BTD1980J3 TO-252 C
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: NSDU95 | NSDU07 | FZT792A | GC195 | RCP137 | RCA41SDH | GC189
History: NSDU95 | NSDU07 | FZT792A | GC195 | RCP137 | RCA41SDH | GC189
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