All Transistors. BTD1980J3 Datasheet

 

BTD1980J3 Datasheet and Replacement


   Type Designator: BTD1980J3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 130 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO-252
 

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BTD1980J3 Datasheet (PDF)

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BTD1980J3

Spec. No. : C654J3 Issued Date : 2004.03.18 CYStech Electronics Corp.Revised Date :2209.02.04 Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 120VBTD1980J3 IC 4ARCESAT 600m Description The BTD1980J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Equivalent Circuit Outline BTD1980J3 TO-252 C

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History: BTD2061FP

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