BTD1980J3 Datasheet. Specs and Replacement
Type Designator: BTD1980J3 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 500
Package: TO-252
BTD1980J3 Substitution
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BTD1980J3 datasheet
Spec. No. C654J3 Issued Date 2004.03.18 CYStech Electronics Corp. Revised Date 2209.02.04 Page No. 1/6 NPN Epitaxial Planar Transistor BVCEO 120V BTD1980J3 IC 4A RCESAT 600m Description The BTD1980J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Equivalent Circuit Outline BTD1980J3 TO-252 C ... See More ⇒
Detailed specifications: BTD1857AJ3G, BTD1857AL3, BTD1857AM3, BTD1857AT3, BTD1858A3, BTD1858I3, BTD1858T3, BTD1864I3, A733, BTD2040N3S, BTD2057A3, BTD2061FP, BTD2098AM3, BTD2098LN3, BTD2098M3, BTD2114N3, BTD2118LJ3
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