All Transistors. BTD2510F3 Datasheet

 

BTD2510F3 Datasheet and Replacement


   Type Designator: BTD2510F3
   SMD Transistor Code: D2510
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 1500
   Noise Figure, dB: -
   Package: TO-263
 

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BTD2510F3 Datasheet (PDF)

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BTD2510F3

Spec. No. : C603F3 Issued Date : 2011.06.08 CYStech Electronics Corp.Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BTD2510F3 Description The BTD2510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construction with b

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BTD2510F3

Spec. No. : C211L3 Issued Date : 2004.11.18 CYStech Electronics Corp.Revised Date : 2013.06.04 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTD2568L3Features High BV , 400V minimum CEO High BV , 550V minimum CBO Pb-free lead plating package Symbol Outline BTD2568L3 SOT-223 CE C BBase B CCollector EEmitter Absolute

Datasheet: BTD2195J3 , BTD2195L3 , BTD2195M3 , BTD2195T3 , BTD2444L3 , BTD2444N3 , BTD2444S3 , BTD2498N3 , 2SC2655 , BTD2568L3 , BTD4512F3 , BTD5213J3 , BTD5213L3 , BTD5213M3 , BTD5510F3 , BTD5765B3 , BTD5974B3 .

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