BTD2510F3 Datasheet. Specs and Replacement
Type Designator: BTD2510F3 📄📄
SMD Transistor Code: D2510
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 1500
Package: TO-263
BTD2510F3 Substitution
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BTD2510F3 datasheet
Spec. No. C603F3 Issued Date 2011.06.08 CYStech Electronics Corp. Revised Date Page No. 1/6 NPN Epitaxial Planar Transistor BTD2510F3 Description The BTD2510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features High BVCEO Low VCE(SAT) High current gain Monolithic construction with b... See More ⇒
Spec. No. C211L3 Issued Date 2004.11.18 CYStech Electronics Corp. Revised Date 2013.06.04 Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor BTD2568L3 Features High BV , 400V minimum CEO High BV , 550V minimum CBO Pb-free lead plating package Symbol Outline BTD2568L3 SOT-223 C E C B Base B C Collector E Emitter Absolute ... See More ⇒
Detailed specifications: BTD2195J3, BTD2195L3, BTD2195M3, BTD2195T3, BTD2444L3, BTD2444N3, BTD2444S3, BTD2498N3, 2SC945, BTD2568L3, BTD4512F3, BTD5213J3, BTD5213L3, BTD5213M3, BTD5510F3, BTD5765B3, BTD5974B3
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