BTD2510F3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD2510F3
SMD Transistor Code: D2510
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 1500
Noise Figure, dB: -
Package: TO-263
BTD2510F3 Transistor Equivalent Substitute - Cross-Reference Search
BTD2510F3 Datasheet (PDF)
btd2510f3.pdf
Spec. No. : C603F3 Issued Date : 2011.06.08 CYStech Electronics Corp.Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BTD2510F3 Description The BTD2510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construction with b
btd2568l3.pdf
Spec. No. : C211L3 Issued Date : 2004.11.18 CYStech Electronics Corp.Revised Date : 2013.06.04 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTD2568L3Features High BV , 400V minimum CEO High BV , 550V minimum CBO Pb-free lead plating package Symbol Outline BTD2568L3 SOT-223 CE C BBase B CCollector EEmitter Absolute
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .