BTD2568L3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD2568L3
SMD Transistor Code: CE
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 550 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-223
BTD2568L3 Transistor Equivalent Substitute - Cross-Reference Search
BTD2568L3 Datasheet (PDF)
btd2568l3.pdf
Spec. No. : C211L3 Issued Date : 2004.11.18 CYStech Electronics Corp.Revised Date : 2013.06.04 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTD2568L3Features High BV , 400V minimum CEO High BV , 550V minimum CBO Pb-free lead plating package Symbol Outline BTD2568L3 SOT-223 CE C BBase B CCollector EEmitter Absolute
btd2510f3.pdf
Spec. No. : C603F3 Issued Date : 2011.06.08 CYStech Electronics Corp.Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BTD2510F3 Description The BTD2510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construction with b
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
