All Transistors. BTD2568L3 Datasheet

 

BTD2568L3 Datasheet and Replacement


   Type Designator: BTD2568L3
   SMD Transistor Code: CE
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 5 W
   Maximum Collector-Base Voltage |Vcb|: 550 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-223
 

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BTD2568L3 Datasheet (PDF)

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BTD2568L3

Spec. No. : C211L3 Issued Date : 2004.11.18 CYStech Electronics Corp.Revised Date : 2013.06.04 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTD2568L3Features High BV , 400V minimum CEO High BV , 550V minimum CBO Pb-free lead plating package Symbol Outline BTD2568L3 SOT-223 CE C BBase B CCollector EEmitter Absolute

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BTD2568L3

Spec. No. : C603F3 Issued Date : 2011.06.08 CYStech Electronics Corp.Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BTD2510F3 Description The BTD2510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construction with b

Datasheet: BTD2195L3 , BTD2195M3 , BTD2195T3 , BTD2444L3 , BTD2444N3 , BTD2444S3 , BTD2498N3 , BTD2510F3 , 2SD313 , BTD4512F3 , BTD5213J3 , BTD5213L3 , BTD5213M3 , BTD5510F3 , BTD5765B3 , BTD5974B3 , BTD6055J3 .

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